Search: onr:"swepub:oai:research.chalmers.se:8f602a3b-e41b-465e-a348-cc30be132367" >
Ultra-low contact r...
-
Anzi, L.Politecnico di Milano,Polytechnic University of Milan
(author)
Ultra-low contact resistance in graphene devices at the Dirac point
- Article/chapterEnglish2018
Publisher, publication year, extent ...
-
2018-02-20
-
IOP Publishing,2018
Numbers
-
LIBRIS-ID:oai:research.chalmers.se:8f602a3b-e41b-465e-a348-cc30be132367
-
https://doi.org/10.1088/2053-1583/aaab96DOI
-
https://research.chalmers.se/publication/523408URI
Supplementary language notes
-
Language:English
-
Summary in:English
Part of subdatabase
Classification
-
Subject category:art swepub-publicationtype
-
Subject category:ref swepub-contenttype
Notes
-
Contact resistance is one of the main factors limiting performance of short-channel graphene field-effect transistors (GFETs), preventing their use in low-voltage applications. Here we investigated the contact resistance between graphene grown by chemical vapor deposition (CVD) and different metals, and found that etching holes in graphene below the contacts consistently reduced the contact resistance, down to 23 m with Au contacts. This low contact resistance was obtained at the Dirac point of graphene, in contrast to previous studies where the lowest contact resistance was obtained at the highest carrier density in graphene (here 200 m was obtained under such conditions). The 'holey' Au contacts were implemented in GFETs which exhibited an average transconductance of 940 S m−1 at a drain bias of only 0.8 V and gate length of 500 nm, which out-perform GFETs with conventional Au contacts.
Subject headings and genre
Added entries (persons, corporate bodies, meetings, titles ...)
-
Mansouri, Aida,1988Politecnico di Milano,Polytechnic University of Milan(Swepub:cth)aidam
(author)
-
Pedrinazzi, P.Politecnico di Milano,Polytechnic University of Milan
(author)
-
Guerriero, E.Politecnico di Milano,Polytechnic University of Milan
(author)
-
Fiocco, M.Politecnico di Milano,Polytechnic University of Milan
(author)
-
Pesquera, A.Graphenea SA
(author)
-
Centeno, A.Graphenea SA
(author)
-
Zurutuza, A.Graphenea SA
(author)
-
Behnam, A.University of Illinois
(author)
-
Carrion, E. A.University of Illinois
(author)
-
Pop, E.Stanford University
(author)
-
Sordan, R.Politecnico di Milano,Polytechnic University of Milan
(author)
-
Politecnico di MilanoGraphenea SA
(creator_code:org_t)
Related titles
-
In:2D Materials: IOP Publishing5:22053-1583
Internet link
Find in a library
To the university's database
- By the author/editor
-
Anzi, L.
-
Mansouri, Aida, ...
-
Pedrinazzi, P.
-
Guerriero, E.
-
Fiocco, M.
-
Pesquera, A.
-
show more...
-
Centeno, A.
-
Zurutuza, A.
-
Behnam, A.
-
Carrion, E. A.
-
Pop, E.
-
Sordan, R.
-
show less...
- About the subject
-
- ENGINEERING AND TECHNOLOGY
-
ENGINEERING AND ...
-
and Mechanical Engin ...
-
and Tribology
-
- ENGINEERING AND TECHNOLOGY
-
ENGINEERING AND ...
-
and Chemical Enginee ...
-
and Other Chemical E ...
-
- ENGINEERING AND TECHNOLOGY
-
ENGINEERING AND ...
-
and Materials Engine ...
-
and Other Materials ...
- Articles in the publication
-
2D Materials
- By the university
-
Chalmers University of Technology