Transient Simulation of Microwave SiC MESFETs With Improved Trap Models

• Measured and simulated transient characteristics ofa SiC metal–semiconductor field-effect transistor are compared. Self-heating, gate tunneling, substrate, and surface traps are taken into account in the simulations. By explicitly filling surface traps at the vicinity of the gate during pinchoff, close correspondence between simulated and measured gate lags is achieved.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Keyword

technology computer-aided design (TCAD)

silicon carbide

microwave transistor

Charge carrier processes

MESFET power amplifiers

Publication and Content Type

art (subject category)

ref (subject category)