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Na0.5K0.5NbO3/SiO2/...
Na0.5K0.5NbO3/SiO2/Si Thin Film Varactor
- Article/chapterEnglish2000
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LIBRIS-ID:oai:research.chalmers.se:9100b815-393a-4c2d-acff-c54512f8ecc3
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https://doi.org/10.1063/1.126159DOI
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https://research.chalmers.se/publication/212386URI
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https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-19636URI
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Language:English
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Summary in:English
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Subject category:art swepub-publicationtype
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QC 20100525
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Perfectly c-axis oriented micrometer thickNa 0.5 K 0.5 NbO 3 (NKN) films have been prepared on a thermally grown ultrathinSiO 2 template layer onto a Si(001) wafer by the pulsed laser deposition technique. A x-ray diffraction θ–2θ scan reveals multiple-cell structuring of single phase NKN film along the polar axis, while filmsgrown onto amorphous ceramic (Corning) glass show a mixture of slightly c-axis oriented NKN and pyrochlore phases. This implies a small amount ofSiO 2 crystallites distributed in an amorphous matrix inherit Si(001) orientation and promotes highly oriented NKN film growth. NKN filmdielectric permittivityε ′ was found to vary from 114.0 to 107.2 in the frequency range 1 kHz–1 MHz, while the resistivity was on the order of2.6×10 10 Ω cm @ 20 kV/cm. The planar interdigital variable reactance device (varactor) based on theNKN/SiO 2 /Si thin film structure possesses a dissipation factor of 0.8% at 1 MHz and zero bias, electrical tunability of 3.1%, and nA order leakage current at 20 V bias at room temperature.
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Koh, Jung-Hyuk
(author)
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Grishin, Alex
(author)
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Abadei, Saeed,1961Chalmers tekniska högskola,Chalmers University of Technology
(author)
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Gevorgian, Spartak,1948Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)spartak
(author)
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Grishin, Alexander M.KTH,Mikroelektronik och informationsteknik, IMIT(Swepub:kth)u179x9xt
(author)
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Chalmers tekniska högskolaMikroelektronik och informationsteknik, IMIT
(creator_code:org_t)
Related titles
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In:Applied Physics Letters: AIP Publishing76, s. 1761-0003-69511077-3118
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