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Observation of surf...
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Bhardwaj, VishalIndian Institute of Technology
(author)
Observation of surface dominated topological transport in strained semimetallic ErPdBi thin films
- Article/chapterEnglish2020
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LIBRIS-ID:oai:research.chalmers.se:91495188-af13-4674-9fc8-6a35f21d959f
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https://research.chalmers.se/publication/519864URI
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https://doi.org/10.1063/5.0023286DOI
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Language:English
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Summary in:English
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In this Letter, we present experimental observation of surface-dominated transport properties in [110]-oriented strained (∼1.6%) ErPdBi thin films. The resistivity data show typical semi-metallic behavior in the temperature range of 3 K ≤ T ≤ 350 K with a transition from semiconductor- to metal-like behavior below 3 K. The metallic behavior at low temperature disappears entirely in the presence of an external magnetic field >1 T. The weak-antilocalization (WAL) effect is observed in magneto-conductance data in the low magnetic field region and follows the Hikami-Larkin-Nagaoka (HLN) model. HLN fitting estimated single coherent channel, i.e., α ∼-0.51 at 1.9 K, and the phase coherence length (Lφ) shows the Lφ ∼T-0.52 power law dependence on temperature in the range of 1.9 K-10 K, indicating the observation of 2D WAL. Shubnikov-de Haas (SdH) oscillations are observed in magneto-resistance data below 10 K and are fitted to standard Lifhsitz Kosevich theory. Fitting reveals the effective mass of charge carriers ∼0.15 me and a finite Berry phase of 0.86π± 0.16. The sheet carrier concentration and mobility of carriers estimated using SdH data are ns ∼1.35 × 1012 cm-2 and μs = 1210 cm2 V-1 s-1, respectively, and match well with the data measured using the Hall measurement at 1.9 K to be n ∼1.22 × 1012 cm-2, μ = 1035 cm2 V-1 s-1. These findings indicate the non-trivial nature and surface-dominated transport properties of strained (110) ErPdBi thin films at low temperatures.
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Bhattacharya, AnupamIndian Institute of Technology
(author)
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Nigam, A. K.Tata Institute of Fundamental Research
(author)
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Dash, Saroj Prasad,1975Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)saroj
(author)
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Chatterjee, RatnamalaIndian Institute of Technology
(author)
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Indian Institute of TechnologyTata Institute of Fundamental Research
(creator_code:org_t)
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In:Applied Physics Letters: AIP Publishing117:130003-69511077-3118
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