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XPS Depth Profiling of Air-Oxidized Nanofilms of NbN on GaN Buffer-Layers

Lubenchenko, AV, 1966 (author)
National Research University Moscow Power Engineering Institute
Batrakov, AA (author)
National Research University Moscow Power Engineering Institute
Krause, Sascha, 1989 (author)
Chalmers tekniska högskola,Chalmers University of Technology
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Pavolotskiy, Alexey, 1968 (author)
Chalmers tekniska högskola,Chalmers University of Technology
Shurkaeva, IV (author)
National Research University Moscow Power Engineering Institute
Ivanov, DA (author)
National Research University Moscow Power Engineering Institute
Lubenchenko, OI (author)
National Research University Moscow Power Engineering Institute
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 (creator_code:org_t)
2017-11-23
2017
English.
In: Journal of Physics: Conference Series. - : IOP Publishing. - 1742-6588 .- 1742-6596. ; 917:9
  • Conference paper (peer-reviewed)
Abstract Subject headings
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  • XPS depth chemical and phase profiling of an air-oxidized niobium nitride thin film on a buffer-layer GaN is performed. It is found that an intermediate layer of Nb5N6 and NbON x under the layer of niobium oxide is generated.I

Subject headings

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

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