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Observations of ver...
Observations of very fast electron traps at SiC/high-κ dielectric interfaces
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- Vidarsson, Arnar M. (author)
- Háskóli Íslands,University of Iceland,Univ Iceland, Iceland
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- Persson, Axel (author)
- Linköping University,Linköpings universitet,Tunnfilmsfysik,Medicinska fakulteten,Competence Centre for III-Nitride Technology C3NiT-Janzén
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- Chen, Jr-Tai (author)
- Linköping University,Linköpings universitet,Halvledarmaterial,Tekniska fakulteten,SweGaN, Olaus Magnusvag 48A, SE-58330 Linkoping, Sweden,Competence Centre for III-Nitride Technology C3NiT-Janzén
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- Haasmann, Daniel (author)
- Griffith University,Griffith Univ, Australia
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- Ul-Hassan, Jawad (author)
- Linköping University,Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
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- Dimitrijev, Sima (author)
- Griffith University,Griffith Univ, Australia; Griffith Univ, Australia
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- Rorsman, Niklas, 1964 (author)
- Chalmers University of Technology,Chalmers tekniska högskola,Chalmers Univ Technol, Sweden
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- Darakchieva, Vanya (author)
- Linköping University,Lund University,Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,LTH profilområde: Nanovetenskap och halvledarteknologi,LTH profilområden,LU profilområde: Ljus och material,Lunds universitets profilområden,Other operations, LTH,Faculty of Engineering, LTH,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH,LTH Profile Area: Nanoscience and Semiconductor Technology,LTH Profile areas,Faculty of Engineering, LTH,LU Profile Area: Light and Materials,Lund University Profile areas,Linköpings universitet,Halvledarmaterial,Tekniska fakulteten,Lund Univ, Sweden,Competence Centre for III-Nitride Technology C3NiT-Janzén
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- Sveinbjörnsson, Einar (author)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten,Univ Iceland, Iceland,Competence Centre for III-Nitride Technology C3NiT-Janzén
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- Sveinbjörnsson, Einar I. (author)
- Linköping University,University of Iceland
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(creator_code:org_t)
- AIP Publishing, 2023
- 2023
- English.
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In: APL Materials. - : AIP Publishing. - 2166-532X. ; 11:11
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http://dx.doi.org/10... (free)
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https://doi.org/10.1...
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Abstract
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- Very fast interface traps have recently been suggested to be the main cause behind poor channel-carrier mobility in SiC metal-oxide-semiconductor field effect transistors. It has been hypothesized that the NI traps are defects located inside the SiO2 dielectric with energy levels close to the SiC conduction band edge and the observed conductance spectroscopy signal is a result of electron tunneling to and from these defects. Using aluminum nitride and aluminum oxide as gate dielectrics instead of SiO2, we detect NI traps at these SiC/dielectric interfaces as well. A detailed investigation of the NI trap density and behavior as a function of temperature is presented and discussed. Advanced scanning transmission electron microscopy in combination with electron energy loss spectroscopy reveals no SiO2 at the interfaces. This strongly suggests that the NI traps are related to the surface region of the SiC rather than being a property of the gate dielectric.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
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- art (subject category)
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Vidarsson, Arnar ...
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Persson, Axel
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Chen, Jr-Tai
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Haasmann, Daniel
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Ul-Hassan, Jawad
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Dimitrijev, Sima
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show more...
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Rorsman, Niklas, ...
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Darakchieva, Van ...
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Sveinbjörnsson, ...
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Sveinbjörnsson, ...
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- About the subject
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- ENGINEERING AND TECHNOLOGY
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ENGINEERING AND ...
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and Electrical Engin ...
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and Other Electrical ...
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- NATURAL SCIENCES
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NATURAL SCIENCES
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and Physical Science ...
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and Condensed Matter ...
- Articles in the publication
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APL Materials
- By the university
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Chalmers University of Technology
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Lund University
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Linköping University