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Developing Graphene...
Developing Graphene based MMICs on SiC substrate
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- Habibpour, Omid, 1979 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Rorsman, Niklas, 1964 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Zirath, Herbert, 1955 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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(creator_code:org_t)
- 2016
- 2016
- English.
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In: 2015 Asia-Pacific Microwave Conference (Apmc), Vols 1-3. ; 1
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Abstract
Subject headings
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- This paper presents the fabrication process development of monolithic microwave integrated circuits (MMICs) based on graphene field effect transistors (G-FETs). In this process, the G-FETs are based on epitaxial graphene on SiC substrate. Base on this process, a wide-band amplifier (0-3GHz) with 6-7 dB gain is realized.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Telekommunikation (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Telecommunications (hsv//eng)
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