Silicon-Integrated 850-nm Hybrid-Cavity VCSEL

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Haglund, Emanuel,1988Chalmers tekniska högskola,Chalmers University of Technology (author)

Silicon-Integrated 850-nm Hybrid-Cavity VCSEL

Article/chapterEnglish2015

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2015
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LIBRIS-ID:oai:research.chalmers.se:a2e8a09d-871b-47bd-9779-4d9ef66657a1
https://research.chalmers.se/publication/228890URI

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Language:English
Summary in:English

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Subject category:kon swepub-publicationtype
Subject category:vet swepub-contenttype

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Silicon photonics is a promising energy-efficient and cost-effective platform for optical integrated circuits. However, due to its indirect bandgap silicon cannot be used to produce effective light sources. An attractive solution to this is heterogeneous integration of the GaAs-based vertical-cavity surface-emitting laser (VCSEL) on silicon. The GaAs-based VCSEL has proven to be both high-speed and energy efficient, with data rates above 70 Gb/s and less than 100 fJ/bit dissipated power up to 50 Gb/s.By employing ultra-thin divinylsiloxane-is-benzocyclobutene (DVS-BCB) adhesive bonding a GaAs-based “half-VCSEL” with a gain region and a top distributed Bragg Reflector (DBR) has been attached to a dielectric DBR on silicon. This creates a hybrid cavity where the standing-wave optical field is extending into both the silicon and GaAs-based parts of the cavity.The hybrid-cavity may eventually enable light to be tapped off to an in-plane waveguide, e.g. using a high contrast grating (HCG) instead of the bottom DBR. Replacing the whole bottom DBR with an HCG also gives the possibility to set the wavelength according to the grating parameters, enabling fabrication of multi-wavelength VCSEL arrays that together with integrated wavelength multiplexers could form 850-nm wavelength division multiplexed (WDM) transmitters.A 9 µm oxide aperture diameter VCSEL has a threshold current of 1.2 mA and a maximum output power of 1.6 mW at ~845 nm. The performance is currently limited by the too small gain-to-resonance detuning and the high thermal impedance.

Subject headings and genre

TEKNIK OCH TEKNOLOGIER Elektroteknik och elektronik Telekommunikation hsv//swe
ENGINEERING AND TECHNOLOGY Electrical Engineering, Electronic Engineering, Information Engineering Telecommunications hsv//eng
Semiconductor lasers
vertical-cavity surface-emitting laser (VCSEL)
silicon photonics

Added entries (persons, corporate bodies, meetings, titles ...)

Kumari, Sulakshna (author)
Westbergh, Petter,1981Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)petwes (author)
Gustavsson, Johan,1974Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)johangus (author)
Roelkens, Gunther (author)
Baets, Roel G. (author)
Larsson, Anders,1957Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)andersla (author)
Chalmers tekniska högskola (creator_code:org_t)

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In:Optics and Photonics in Sweden, 28-29 Oct. 2015

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