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Single-Chip 220-GHz...
Single-Chip 220-GHz Active Heterodyne Receiver and Transmitter MMICs With On-Chip Integrated Antenna
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- Abbasi, Morteza, 1982 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Gunnarsson, Sten, 1976 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Wadefalk, Niklas, 1973 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Kozhuharov, Rumen, 1949 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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Svedin, J. (author)
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- Cherednichenko, Serguei, 1970 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Angelov, Iltcho, 1943 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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Kallfass, I. (author)
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Leuther, A. (author)
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- Zirath, Herbert, 1955 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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(creator_code:org_t)
- 2011
- 2011
- English.
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In: IEEE Transactions on Microwave Theory and Techniques. - 0018-9480 .- 1557-9670. ; 59:2, s. 466-478
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http://dx.doi.org/10...
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https://research.cha...
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https://doi.org/10.1...
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Abstract
Subject headings
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- This paper presents the design and characterization of single-chip 220-GHz heterodyne receiver (RX) and transmitter (TX) monolithic microwave integrated circuits (MMICs) with integrated antennas fabricated in 0.1-mu m GaAs metamorphic high electron-mobility transistor technology. The MMIC receiver consists of a modified square-slot antenna, a three-stage low-noise amplifier, and a sub-harmonically pumped resistive mixer with on-chip local oscillator frequency multiplication chain. The transmitter chip is the dual of the receiver chip by inverting the direction of the RF amplifier. The chips are mounted on 5-mm silicon lenses in order to interface the antenna to the free space and are packaged into two separate modules. The double-sideband noise figure (NF) and conversion gain of the receiver module are measured with the Y-factor method. The total noise temperature of 1310 +/- 100K(corresponding to an NF of 7.4 dB), including the losses in the lens and antenna, is measured at 220 GHz with a respective conversion gain of 3.5 dB. The radiated continuous-wave power from the transmitter module is measured to be up to -6 dBm from 212 to 226 GHz. The transmitter and receiver are linked in a quasi-optical setup and the IF to IF response is measured to be flat up to 10 GHz. This is verified to be usable for transmission of a 12.5-Gb/s data stream between the transmit and receive modules over a 0.5-m wireless link. The modules operate with a 1.3-V supply and each consume 110-mW dc power. The presented 220-GHz integrated circuits and modules can be used in a variety of applications, including passive and active imaging, as well as high-speed data communications. To the best of our knowledge, these MMICs are the highest frequency single-chip low-noise heterodyne receiver and transmitter pair reported to date.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- ghz
- multifunctional
- imaging
- slot-square substrate
- cmos
- GaAs
- millimeter wave
- 220 GHz
- model
- mixer
- single chip
- wave
- (mHEMT)
- microwave integrated circuit (MMIC)
- quasi-optical
- schottky diodes
- metamorphic high electron-mobility transistor
- mesfet
- sounder
- G-band
- microstrip
- monolithic
- lens feed antenna
Publication and Content Type
- art (subject category)
- ref (subject category)
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- By the author/editor
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Abbasi, Morteza, ...
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Gunnarsson, Sten ...
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Wadefalk, Niklas ...
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Kozhuharov, Rume ...
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Svedin, J.
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Cherednichenko, ...
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show more...
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Angelov, Iltcho, ...
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Kallfass, I.
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Leuther, A.
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Zirath, Herbert, ...
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show less...
- About the subject
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- ENGINEERING AND TECHNOLOGY
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ENGINEERING AND ...
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and Electrical Engin ...
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IEEE Transaction ...
- By the university
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Chalmers University of Technology