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Ultra-clean Si/Si i...
Ultra-clean Si/Si interface formation by surface preparation and direct bonding in ultra-high vacuum
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Hermansson, Karin (author)
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Grey, Francois (author)
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- Bengtsson, Stefan, 1961 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Södervall, Ulf, 1954 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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(creator_code:org_t)
- 1998
- 1998
- English.
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In: Proceedings of the Fourth International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications. ; , s. 401-
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Abstract
Subject headings
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- Silicon surfaces have been cleaned and bonded in ultra-high vacuum at a pressure in the 10-10 torr range. The bonded interfaces show extremely low contamination levels as measured by secondary ion mass spectroscopy. Nevertheless, a potential barrier could be detected at the interface spreading resistance and current vs. temperature measurements. This suggests that the barrier is caused by inevitable dislocation networks due to wafer misorientation, as well as residual oxygen at the interface
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- wafer bonding
- dislocations
- electric current
- surface contamination
- secondary ion mass spectra
- vacuum techniques
- surface cleaning
- silicon
- interface structure
- mass spectroscopic chemical analysis
- electric resistance
- elemental semiconductors
Publication and Content Type
- kon (subject category)
- ref (subject category)
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