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Growth of GaSb1-xBi...
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Song, Yuxin,1981Chalmers tekniska högskola,Chalmers University of Technology
(author)
Growth of GaSb1-xBix by molecular beam epitaxy
- Article/chapterEnglish2012
Publisher, publication year, extent ...
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American Vacuum Society,2012
Numbers
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LIBRIS-ID:oai:research.chalmers.se:acd027cc-7f89-453a-bcfb-ca82a4fa9337
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https://doi.org/10.1116/1.3672025DOI
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https://research.chalmers.se/publication/153678URI
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https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-94064URI
Supplementary language notes
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Language:English
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Summary in:English
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Classification
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Subject category:art swepub-publicationtype
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Subject category:ref swepub-contenttype
Notes
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QC 20120508
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Molecular beam epitaxy for GaSb1-xBix is investigated in this article. The growth window for incorporation of Bi in GaSb was found. Strategies of avoiding formation of Bi droplets and enhancing Bi incorporation were studied. The Bi incorporation was confirmed by SIMS and RBS measurements. The Bi concentration in the samples was found to increase with increasing growth temperature and Bi flux. The position of GaSb1-xBix layer peak in XRD rocking curves is found to be correlated to Bi composition. Surface and structural properties of the samples were also investigated. Samples grown on GaSb and GaAs substrates were compared and no apparent difference for Bi incorporation was found.
Subject headings and genre
Added entries (persons, corporate bodies, meetings, titles ...)
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Wang, Shu Min,1963Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)shumin
(author)
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Roy, Ivy SahaChalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)ivys
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Shi, Peixiong
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Hallén, AndersKTH,Integrerade komponenter och kretsar(Swepub:kth)u11ywmz1
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Wang, Shumin
(author)
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Chalmers tekniska högskolaIntegrerade komponenter och kretsar
(creator_code:org_t)
Related titles
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In:Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures: American Vacuum Society30:2, s. 02B114-2166-27542166-2746
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In:Journal of Vacuum Science & Technology B: American Vacuum Society30:2, s. 02B114-1071-10231520-8567
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