Direct observation of lateral carrier diffusion in ridge waveguide InGaNAs lasers

Adolfsson, Göran, 1981 (author): Chalmers tekniska högskola,Chalmers University of Technology

Wang, Shu Min, 1963 (author): Chalmers tekniska högskola,Chalmers University of Technology

Sadeghi, Mahdad, 1964 (author): Chalmers tekniska högskola,Chalmers University of Technology

Bengtsson, Jörgen, 1968 (author): Chalmers tekniska högskola,Chalmers University of Technology

Larsson, Anders, 1957 (author): Chalmers tekniska högskola,Chalmers University of Technology

(creator_code:org_t)

2009
2009
English.
In: IEEE Photonics Technology Letters. - 1041-1135 .- 1941-0174. ; 21:134, s. 134-136

Related links:: http://dx.doi.org/10...; show more...; https://research.cha...; https://doi.org/10.1...; show less...

Abstract Subject headings

We present results from measurements of the subthreshold lateral spontaneous emission profile in 1.3-mu m wavelength ridge waveguide InGaNAs quantum-well lasers using a scanning near-field optical microscopy technique. The measurements reveal the presence of significant lateral carrier diffusion which has a profound effect on the temperature dependence of the threshold current. This effect is frequently omitted when the characteristic temperature of the threshold current is considered.

TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Telekommunikation (hsv//swe)
ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Telecommunications (hsv//eng)
TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

By the author/editor: Adolfsson, Göran ...; Wang, Shu Min, 1 ...; Sadeghi, Mahdad, ...; Bengtsson, Jörge ...; Larsson, Anders, ...; Lim, Jun; show more...; Vilokkinen, Vill ...; Melanen, P.; show less...

About the subject

ENGINEERING AND TECHNOLOGY: ENGINEERING AND ...; and Electrical Engin ...; and Telecommunicatio ...

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