A Static Frequency Divider in GaN HEMT Technology

• In this work a static frequency divider-by-two based on source coupled logic (SCL), using a 100 nm gate length gallium nitride (GaN) high electron mobility transistor (HEMT) technology, is presented. The circuit uses a master-slave (MS) latch topology with an output buffer, and is verified to divide input frequencies from 1–27 GHz. It enables integrated high power, low phase noise GaN HEMT signal sources, which through the divider can be locked to commercial phase locked loops (PLLs).

Subject headings

NATURVETENSKAP  -- Fysik -- Annan fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Other Physics Topics (hsv//eng)

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Signalbehandling (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Signal Processing (hsv//eng)

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Keyword

HEMT

Quasi-static

GaN

Gallium Nitride

Frequency divider

Wideband

Publication and Content Type

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