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Molecular beam epitaxy growth of GaSb1-xBix without rotation
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- Chi, Chaodan (author)
- Chinese Academy of Sciences
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- Yue, L. (author)
- Chinese Academy of Sciences
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- Zhang, Yanchao (author)
- ShanghaiTech University
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- (creator_code:org_t)
- Elsevier BV, 2019
- 2019
- English.
- In: Vacuum. - : Elsevier BV. - 0042-207X. ; 168
- Journal article (peer-reviewed)
Abstract
Subject headings
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- GaSb1-xBix thin film was grown on a 2 inch GaSb substrate by molecular beam epitaxy (MBE) without substrate rotation. Bi composition is found to vary from 2.76% to 3.98% across the wafer. The distribution of Bi content is mainly determined by spatial non-uniformity of Sb/Ga flux ratio, while Bi flux has slightly influence. Ostwald ripening process is confirmed to be reason for bigger Bi droplets via Bi surface diffusion. With the increase of Sb/Ga flux ratio, Ostwald ripening process is suppressed. At high Bi flux, excess Ga atoms accumulate on surface and form droplets.
Subject headings
- NATURVETENSKAP -- Kemi -- Oorganisk kemi (hsv//swe)
- NATURAL SCIENCES -- Chemical Sciences -- Inorganic Chemistry (hsv//eng)
- TEKNIK OCH TEKNOLOGIER -- Kemiteknik -- Polymerteknologi (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Chemical Engineering -- Polymer Technologies (hsv//eng)
- NATURVETENSKAP -- Kemi -- Materialkemi (hsv//swe)
- NATURAL SCIENCES -- Chemical Sciences -- Materials Chemistry (hsv//eng)
Keyword
- Bi incorporation
- Sb/Ga flux ratio
- Bi flux
- Stationary growth
- GaSbBi
- Molecular beam epitaxy
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- Chalmers University of Technology
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