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The influence of inhomogeneous trap distribution on results of DLTS study
- Kaczmarczyk, M. (author)
- Kaniewska, M. (author)
-
- Engström, Olof, 1943 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
- (creator_code:org_t)
- Elsevier BV, 2011
- 2011
- English.
- In: Microelectronics and Reliability. - : Elsevier BV. - 0026-2714. ; 51:7, s. 1159-1161
- Journal article (peer-reviewed)
Abstract
Subject headings
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- A model is developed to describe how a narrow distribution of deep traps adjacent to quantum dots (QDs) influences the trap-related signals measured by frequency scanned deep level transient spectroscopy (FS-DLTS). By comparison with experiment, it is demonstrated that traps with a steep concentration gradient, positioned in the so called transition layer close to the edge of the depletion region ("lambda-effect"), have a strong influence on DLTS signal amplitudes. This is manifested by an extreme sensitivity to the change in the Fermi-level position when temperature is varied.
Subject headings
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- electron traps
- v7
- spectroscopy
- 1989
- molecular-beam epitaxy
- p399
- semiconductors
- and n
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- art (subject category)
- ref (subject category)
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