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Resistive SiC-MESFE...
Resistive SiC-MESFET mixer
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- Andersson, Kristoffer, 1976 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Eriksson, Joakim, 1969 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Rorsman, Niklas, 1964 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Zirath, Herbert, 1955 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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(creator_code:org_t)
- Institute of Electrical and Electronics Engineers (IEEE), 2002
- 2002
- English.
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In: IEEE Microwave and Wireless Components Letters. - : Institute of Electrical and Electronics Engineers (IEEE). - 1531-1309 .- 1558-1764. ; 12:4, s. 119-121
- Related links:
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https://doi.org/10.1...
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Abstract
Subject headings
Close
- A single-ended silicon carbide resisitve MESFET mixer with minimum conversion loss (CL) of 10.2 dB and an input third order intercept point of 35.7 dB at 3.3 GHz was designed and characterized. A lumped-element, large-signal model was used for modeling the device. The drain-source resistance was measured by taking the real part of the output port impedence. Analysis suggested that the optimum gate bias for minimum CL was -6.7 V.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- Electric resistance
- Frequency converters
- Frequency modulation
- MESFET devices
- Energy gap
- Silicon carbide
- Bandpass filters
- Computer simulation
- Electric conductivity
- Mixer circuits
Publication and Content Type
- art (subject category)
- ref (subject category)
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