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Controlling In-Ga-Zn-O thin films transport properties through density changes
- Kaczmarski, J. (author)
-
- Boll, Torben, 1979 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
- Borysiewicz, M. A. (author)
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- Kaminska, E. (author)
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- (creator_code:org_t)
- Elsevier BV, 2016
- 2016
- English.
- In: Thin Solid Films. - : Elsevier BV. - 0040-6090. ; 608, s. 57-61
- Journal article (peer-reviewed)
Abstract
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- In the following study we investigate the effect of the magnetron cathode current (I-c) during reactive sputtering of In-Ga-Zn-O (a-IGZO) on thin-films nanostructure and transport properties. All fabricated films are amorphous, according to X-ray diffraction measurements. However, High Resolution Transmission Electron Microscopy revealed the a-IGZO fabricated at I-C = 70 mA to contain randomly-oriented nanocrystals dispersed in amorphous matrix, which disappear in films deposited at higher cathode current. These nanocrystals have the same composition as the amorphous matrix. One can observe that, while I-C is increased from 70 to 150 mA, the carrier mobility improves from mu(Hall) = 6.9 cm(2)/Vs to mu(Hall) = 9.1 cm(2)/Vs. Additionally, the increase of I-C caused a reduction of the depletion region trap states density of the Ru-Si-O/In-Ga-Zn-O Schottky barrier. This enhancement in transport properties is attributed to the greater overlapping of s-orbitals of the film-forming cations caused by increased density, evidenced by X-ray reflectivity, at a fixed chemical composition, regardless nanostructure of thin films. (C) 2016 Elsevier B.V. All rights reserved.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Materialteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Materials Engineering (hsv//eng)
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
Keyword
- In-Ga-Zn-O
- Schottky contacts
- Amorphous oxide semiconductors
- IGZO
- Atom Probe Tomography
Publication and Content Type
- art (subject category)
- ref (subject category)
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