The performance limits of epigraphene Hall sensors doped across the Dirac point

He, Hans, 1989 (author): Chalmers tekniska högskola,Chalmers University of Technology,Chalmers Univ Technol, Sweden

Shetty, Naveen, 1988 (author): Chalmers tekniska högskola,Chalmers University of Technology,Chalmers Univ Technol, Sweden

Bauch, Thilo, 1972 (author): Chalmers tekniska högskola,Chalmers University of Technology,Chalmers Univ Technol, Sweden

Kubatkin, Sergey, 1959 (author): Chalmers tekniska högskola,Chalmers University of Technology,Chalmers Univ Technol, Sweden

Yakimova, Rositsa (author): Linköpings universitet,Halvledarmaterial,Tekniska fakulteten

Lara Avila, Samuel, 1983 (author): Chalmers tekniska högskola,Chalmers University of Technology,Chalmers Univ Technol, Sweden; Natl Phys Lab, England

(creator_code:org_t)

AIP Publishing, 2020
2020
English.
In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 116:22

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Abstract Subject headings

Epitaxial graphene on silicon carbide, or epigraphene, provides an excellent platform for Hall sensing devices in terms of both high electrical quality and scalability. However, the challenge in controlling its carrier density has thus far prevented systematic studies of epigraphene Hall sensor performance. In this work, we investigate epigraphene Hall sensors where epigraphene is doped across the Dirac point using molecular doping. Depending on the carrier density, molecular-doped epigraphene Hall sensors reach room temperature sensitivities of S-V=0.23V/(VT) and S-I=1440V/(AT), with magnetic field detection limits down to B-MIN=27 nT/root Hz at 20kHz. Thermally stabilized devices demonstrate operation up to 150 degrees C with S-V=0.12V/(VT), S-I=300V/(AT), and B-MIN similar to 100 nT/root Hz at 20kHz. Our work demonstrates that epigraphene doped close to the Dirac point could potentially outperform III-V Hall elements in the extended and military temperature ranges.

By the author/editor: He, Hans, 1989; Shetty, Naveen, ...; Bauch, Thilo, 19 ...; Kubatkin, Sergey ...; Kaufmann, T.; Cornils, M.; show more...; Yakimova, Rosits ...; Lara Avila, Samu ...; show less...

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