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20-Gb/s Modulation ...
20-Gb/s Modulation of Silicon-Integrated Short-Wavelength Hybrid-Cavity VCSELs
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- Haglund, Emanuel, 1988 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Kumari, Sulakshna (author)
- Universiteit Gent,Ghent university
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- Westbergh, Petter, 1981 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Gustavsson, Johan, 1974 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Baets, Roel G. (author)
- Universiteit Gent,Ghent university
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- Roelkens, Gunther (author)
- Universiteit Gent,Ghent university
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- Larsson, Anders, 1957 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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(creator_code:org_t)
- 2016
- 2016
- English.
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In: IEEE Photonics Technology Letters. - 1041-1135 .- 1941-0174. ; 28:8, s. 856 - 859
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Abstract
Subject headings
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- We investigate the dynamics of silicon-integrated 850-nm-wavelength hybrid-cavity vertical-cavity surface-emitting lasers (VCSELs). The VCSELs consist of a GaAs-based half-VCSEL attached to a dielectric distributed Bragg reflector on a silicon substrate using ultra-thin divinylsiloxane-bis-benzocyclobutene adhesive bonding. A 5-µm oxide aperture diameter VCSEL, with a small signal modulation bandwidth of 11 GHz, supports data transmission at bit rates up to 20 Gb/s. The modulation bandwidth and the large signal modulation characteristics are found to be impaired by the high thermal impedance.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Telekommunikation (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Telecommunications (hsv//eng)
Keyword
- semiconductor lasers
- silicon photonics
- High-speed modulation
- vertical-cavity surface-emitting laser (VCSEL)
- optical interconnects
- large signal modulation
Publication and Content Type
- art (subject category)
- ref (subject category)
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