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Growth of metamorph...
Growth of metamorphic InGaP layers on GaAs substrates
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- Yan, J. Y. (author)
- Chinese Academy of Sciences
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- Gong, Q. (author)
- Chinese Academy of Sciences
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- Yue, L. (author)
- Chinese Academy of Sciences
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- Liu, Q. B. (author)
- Chinese Academy of Sciences
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- Cheng, R. H. (author)
- Qufu Normal University
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- Cao, C. F. (author)
- Chinese Academy of Sciences
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- Wang, Y. (author)
- Chinese Academy of Sciences
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- Wang, Shu Min, 1963 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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(creator_code:org_t)
- Elsevier BV, 2013
- 2013
- English.
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In: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248. ; 378, s. 141-144
- Related links:
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http://dx.doi.org/10...
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https://research.cha...
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https://doi.org/10.1...
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Abstract
Subject headings
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- We report on the growth of InGaP metamorphic layer by gas source molecular-beam epitaxy. After optimization of the growth temperatures of the compositionally graded InGaP layer and the indium content in the top metamorphic InGaP layer, almost fully relaxed metamorphic layer was obtained with surface roughness of only about 2.17 nm. Strong photoluminescence signals were measured from both InGaAs quantum well and InAs quantum dots embedded in the metamorphic layer, indicating that the top metamorphic layer had low density of threading dislocations. (c) 2013 Elsevier B.V. All rights reserved.
Subject headings
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
Keyword
- Molecular beam epitaxy
- optimization
- Semiconducting III-V
- materials
- Phosphides
- molecular-beam epitaxy
- Stresses
Publication and Content Type
- art (subject category)
- ref (subject category)
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