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Growth of metamorphic InGaP layers on GaAs substrates
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- Yan, J. Y. (author)
- Chinese Academy of Sciences
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- Gong, Q. (author)
- Chinese Academy of Sciences
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- Yue, L. (author)
- Chinese Academy of Sciences
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- (creator_code:org_t)
- Elsevier BV, 2013
- 2013
- English.
- In: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248. ; 378, s. 141-144
- Journal article (peer-reviewed)
Abstract
Subject headings
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- We report on the growth of InGaP metamorphic layer by gas source molecular-beam epitaxy. After optimization of the growth temperatures of the compositionally graded InGaP layer and the indium content in the top metamorphic InGaP layer, almost fully relaxed metamorphic layer was obtained with surface roughness of only about 2.17 nm. Strong photoluminescence signals were measured from both InGaAs quantum well and InAs quantum dots embedded in the metamorphic layer, indicating that the top metamorphic layer had low density of threading dislocations. (c) 2013 Elsevier B.V. All rights reserved.
Subject headings
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
Keyword
- Molecular beam epitaxy
- optimization
- Semiconducting III-V
- materials
- Phosphides
- molecular-beam epitaxy
- Stresses
Publication and Content Type
- art (subject category)
- ref (subject category)
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- By the author/editor
- Yan, J. Y.
- Gong, Q.
- Yue, L.
- Liu, Q. B.
- Cheng, R. H.
- Cao, C. F.
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- Wang, Y.
- Wang, Shu Min, 1 ...
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- About the subject
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- NATURAL SCIENCES
- NATURAL SCIENCES
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- Journal of Cryst ...
- By the university
- Chalmers University of Technology
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