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Molecular Beam Epit...
Molecular Beam Epitaxy of Dilute Nitride Optoelectronic Devices
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- Guina, M. (author)
- Tampereen Yliopisto,University of Tampere
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- Wang, Shumin, 1963 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Aho, Arto (author)
- Tampereen Yliopisto,University of Tampere
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(creator_code:org_t)
- 2018
- 2018
- English.
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In: Molecular Beam Epitaxy: from Research to Mass Production. - 9780128121368 ; , s. 73-94
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https://doi.org/10.1...
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Abstract
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- Molecular beam epitaxy of dilute nitride materials has progressed a long way toward claiming its unique place as a technology that enables the development of new types of optoelectronics devices. This chapter starts by reviewing the particularities related to epitaxial incorporation of nitrogen into III–V materials using plasma-assisted molecular beam epitaxy. We then focus on describing the interplay between the growth parameters and nitrogen incorporation processes in dilute nitride arsenides (III-N-As). Emphasis is put on nitrogen-related growth kinetics that are accompanied by various bonding configurations and formation of several types of defects. Then we review the basics of MBE for dilute nitride antimonides (III-N-Sb) and dilute nitride phosphides (III-N-P). Finally, we review the growth optimization and properties of several classes of dilute nitride heterostructures for optoelectronics. These include uncooled long-wavelength laser diodes, ultrafast nonlinear devices, high power lasers enabling yellow-orange emission by frequency doubling, and high-efficiency multijunction solar cells, for which dilute nitride MBE technology is rapidly evolving and provides development opportunities.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Telekommunikation (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Telecommunications (hsv//eng)
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Keyword
- GaInNAsSb
- GaNP molecular beam epitaxy
- plasma assisted epitaxy
- dilute nitride tandem solar cells
- dilute nitride VECSELs
- III-N-V
- GaNSb
- GaNAs
- GaInNAs
- dilute nitride SESAMs
- dilute nitride lasers
- Dilute nitrides
Publication and Content Type
- kap (subject category)
- vet (subject category)
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