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The Schottky barrie...
The Schottky barrier transistor in emerging electronic devices
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Schwarz, Mike (author)
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- Vethaak, Tom, 1993 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Derycke, Vincent (author)
- Université Paris-Saclay,University Paris-Saclay
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- Francheteau, Anais (author)
- Université Grenoble Alpes,Grenoble Alpes University
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- Iniguez, Benjamin (author)
- Universitat Rovira i Virgili,Rovira i Virgili University
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- Kataria, Satender (author)
- Rheinisch-Westfaelische Technische Hochschule Aachen,RWTH Aachen University
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Kloes, Alexander (author)
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- Lefloch, Francois (author)
- Université Grenoble Alpes,Grenoble Alpes University
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- Lemme, M.C. (author)
- Rheinisch-Westfaelische Technische Hochschule Aachen,RWTH Aachen University
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Snyder, John P. (author)
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- Weber, Walter M. (author)
- Technische Universität Wien,Vienna University of Technology
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- Calvet, Laurie E. (author)
- Centre national de la recherche scientifique (CNRS)
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(creator_code:org_t)
- 2023
- 2023
- English.
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In: Nanotechnology. - 1361-6528 .- 0957-4484. ; 34:35
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https://research.cha... (primary) (free)
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https://research.cha...
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https://doi.org/10.1...
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Abstract
Subject headings
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- This paper explores how the Schottky barrier (SB) transistor is used in a variety of applications and material systems. A discussion of SB formation, current transport processes, and an overview of modeling are first considered. Three discussions follow, which detail the role of SB transistors in high performance, ubiquitous and cryogenic electronics. For high performance computing, the SB typically needs to be minimized to achieve optimal performance and we explore the methods adopted in carbon nanotube technology and two-dimensional electronics. On the contrary for ubiquitous electronics, the SB can be used advantageously in source-gated transistors and reconfigurable field-effect transistors (FETs) for sensors, neuromorphic hardware and security applications. Similarly, judicious use of an SB can be an asset for applications involving Josephson junction FETs.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Keyword
- source-gated transistors
- 1D materials
- 2D materials
- thin film transistors
- Josephson junctions
- Schottky barriers
- field effect transistors
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- for (subject category)
- ref (subject category)
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- By the author/editor
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Schwarz, Mike
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Vethaak, Tom, 19 ...
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Derycke, Vincent
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Francheteau, Ana ...
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Iniguez, Benjami ...
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Kataria, Satende ...
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show more...
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Kloes, Alexander
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Lefloch, Francoi ...
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Lemme, M.C.
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Snyder, John P.
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Weber, Walter M.
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Calvet, Laurie E ...
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show less...
- About the subject
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- ENGINEERING AND TECHNOLOGY
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ENGINEERING AND ...
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and Electrical Engin ...
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and Other Electrical ...
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- NATURAL SCIENCES
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NATURAL SCIENCES
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and Physical Science ...
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and Condensed Matter ...
- Articles in the publication
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Nanotechnology
- By the university
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Chalmers University of Technology