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- Krishnamurthi, Kathiravan (author)
GaAs single-barrier varactors for millimeter-wave triplers: guidelines for enhanced performance
- Article/chapterEnglish1994
Publisher, publication year, extent ...
- Institute of Electrical and Electronics Engineers (IEEE),1994
Numbers
- LIBRIS-ID:oai:research.chalmers.se:c6361162-eb74-4061-bee3-dda1ea3a166a
- https://research.chalmers.se/publication/62443URI
- https://doi.org/10.1109/22.339790DOI
Supplementary language notes
- Language:English
- Summary in:English
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- SwePubSwePub
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Notes
- Earlier single-barrier varactors (SBVs) fabricated on GaAs suffered from low Q because of leaky barriers. By placing a thin AlAs layer in the center of an Al0.4Ga0.6As barrier, and using In0.2Ga0.8As spacers, one can increase the effective barrier height, thereby achieving SBVs with both high Q and good capacitance-modulation characteristics. Simulation of a 192-GHz tripler using these varactors shows purely reactive multiplication, without the output-power saturation both predicted and observed in triplers using leaky-barrier SBVs.
Subject headings and genre
- TEKNIK OCH TEKNOLOGIER Elektroteknik och elektronik hsv//swe
- ENGINEERING AND TECHNOLOGY Electrical Engineering, Electronic Engineering, Information Engineering hsv//eng
- QBV
- varactors
- HBV
- SBV
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- Nilsen, Svein M.,1956Chalmers tekniska högskola,Chalmers University of Technology (author)
- Harrison, Robert G. (author)
- Chalmers tekniska högskola (creator_code:org_t)
Related titles
- In:IEEE Transactions on Microwave Theory and Techniques: Institute of Electrical and Electronics Engineers (IEEE)42:12, s. 2512-25160018-94801557-9670
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