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GaAs single-barrier...
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Krishnamurthi, Kathiravan
(author)
GaAs single-barrier varactors for millimeter-wave triplers: guidelines for enhanced performance
- Article/chapterEnglish1994
Publisher, publication year, extent ...
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Institute of Electrical and Electronics Engineers (IEEE),1994
Numbers
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LIBRIS-ID:oai:research.chalmers.se:c6361162-eb74-4061-bee3-dda1ea3a166a
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https://research.chalmers.se/publication/62443URI
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https://doi.org/10.1109/22.339790DOI
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Language:English
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Summary in:English
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Subject category:art swepub-publicationtype
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Subject category:ref swepub-contenttype
Notes
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Earlier single-barrier varactors (SBVs) fabricated on GaAs suffered from low Q because of leaky barriers. By placing a thin AlAs layer in the center of an Al0.4Ga0.6As barrier, and using In0.2Ga0.8As spacers, one can increase the effective barrier height, thereby achieving SBVs with both high Q and good capacitance-modulation characteristics. Simulation of a 192-GHz tripler using these varactors shows purely reactive multiplication, without the output-power saturation both predicted and observed in triplers using leaky-barrier SBVs.
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Nilsen, Svein M.,1956Chalmers tekniska högskola,Chalmers University of Technology
(author)
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Harrison, Robert G.
(author)
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Chalmers tekniska högskola
(creator_code:org_t)
Related titles
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In:IEEE Transactions on Microwave Theory and Techniques: Institute of Electrical and Electronics Engineers (IEEE)42:12, s. 2512-25160018-94801557-9670
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