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- Bengtsson, Stefan,1961Chalmers tekniska högskola,Chalmers University of Technology (author)
Characterization of thin SOI layers
- Article/chapterEnglish1995
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- 1995
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- LIBRIS-ID:oai:research.chalmers.se:c6fbedc7-86aa-47fb-b357-576ca324e4e2
- https://research.chalmers.se/publication/17767URI
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- Language:English
- Summary in:English
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- Silicon-on-insulator materials still suffer from imperfect electrical and crystalline quality and a spread in performance is observed. Viable characterization techniques are necessary to advance the quality of the materials. This paper gives an overview of characterization methods for silicon-on-insulator materials. Different techniques, both destructive and nondestructive, for determination of silicon and silicon dioxide film thicknesses, structural defects and impurities are reviewed. The potentials and limits of different techniques for silicon-on-insulator material characterization are discussed and some examples of results are given primarily for silicon-on-insulator materials formed by wafer bonding
Subject headings and genre
- TEKNIK OCH TEKNOLOGIER Elektroteknik och elektronik Annan elektroteknik och elektronik hsv//swe
- ENGINEERING AND TECHNOLOGY Electrical Engineering, Electronic Engineering, Information Engineering Other Electrical Engineering, Electronic Engineering, Information Engineering hsv//eng
- materials testing
- wafer bonding
- crystal defects
- integrated circuit technology
- quality control
- silicon-on-insulator
- inspection
- impurity distribution
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- Chalmers tekniska högskola (creator_code:org_t)
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- In:Proceedings of the Third International Symposium on Semiconductor Wafer Bonding: Physics and Applications, s. 221-
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