Bonded Al2O3-covered Si-wafers for highly thermally conductive SOI-materials

Ericsson, Per, 1968 (author): Chalmers tekniska högskola,Chalmers University of Technology

Bengtsson, Stefan, 1961 (author): Chalmers tekniska högskola,Chalmers University of Technology

Skarp, Jarmo (author)

Kanniainen, T. (author)

(creator_code:org_t)

1998
1998
English.
In: Proceedings of the Fourth International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications. ; , s. 576-

Abstract Subject headings

Aluminum oxide films deposited by low temperature atomic layer epitaxy were studied as an alternative to the commonly used silicon dioxide buried insulator of bonded silicon on insulator wafers. Successful room temperature bonding was performed between bare hydrophilic silicon wafers and silicon wafers covered with aluminum oxide. The surface energy after room temperature bonding was 50 mJ/m2, and after an anneal at 330°C, it had increased to 600 mJ/m2. After annealing at 500°C, the silicon wafers fractured upon insertion of a 50 μm blade. Higher temperatures than 500°C resulted in wafer separation, probably due to film densification and associated tensile stress. Leakage currents through the aluminum oxide films and breakdown electric fields were satisfactory for the intended application after a post-deposition anneal

TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

By the author/editor: Ericsson, Per, 1 ...; Bengtsson, Stefa ...; Skarp, Jarmo; Kanniainen, T.

About the subject

ENGINEERING AND TECHNOLOGY: ENGINEERING AND ...; and Electrical Engin ...; and Other Electrical ...

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