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Optimization and sm...
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Westlund, Andreas,1985Chalmers tekniska högskola,Chalmers University of Technology
(author)
Optimization and small-signal modeling of zero-bias InAs self-switching diode detectors
- Article/chapterEnglish2015
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LIBRIS-ID:oai:research.chalmers.se:ca03c0ce-56b7-45c6-b933-26d199086442
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https://doi.org/10.1016/j.sse.2014.11.014DOI
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https://research.chalmers.se/publication/213853URI
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Language:English
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Summary in:English
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Subject category:art swepub-publicationtype
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Design optimization of the InAs self-switching diode (SSD) intended for direct zero-bias THz detection is presented. The SSD, which consists of nanometer-sized channels in parallel, was described using an equivalent small-signal circuit. Expressions for voltage responsivity and noise equivalent power (NEP) were derived in terms of geometrical design parameters of the SSD, i.e. the channel length and the number of channels. Modeled design dependencies were confirmed by RF and DC measurements on InAs SSDs. In terms of NEP, an optimum number of channels were found with the detector driven by a 50 Omega source. With a matched source, the model predicted a responsivity of 1900 V/W and NEP of 7.7 pW/Hz(1/2) for a single-channel InAs SSD with 35 nm channel width. Monte Carlo device simulations supported observed design dependencies. The proposed small-signal model can be used to optimize SSDs of any material system for low-noise and high-frequency operation as zero-bias detectors. In large signal measurements, the responsivity of the InAs SSDs exhibited a 1 dB deviation from linear responsivity at an input power of -3 dBm from a 50 Omega source.
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Sangare, P.Lille I: Universite des Sciences et Technologies de Lille (USTL),Lille 1 University of Science and Technology (USTL)
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Ducournau, G.Lille I: Universite des Sciences et Technologies de Lille (USTL),Lille 1 University of Science and Technology (USTL)
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Iniguez-de-la-Torre, I.Universidad de Salamanca,University of Salamanca
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Nilsson, Per-Åke,1964Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)pernilss
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Gaquiere, C.Lille I: Universite des Sciences et Technologies de Lille (USTL),Lille 1 University of Science and Technology (USTL)
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Desplanque, L.Lille I: Universite des Sciences et Technologies de Lille (USTL),Lille 1 University of Science and Technology (USTL)
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Wallart, X.Lille I: Universite des Sciences et Technologies de Lille (USTL),Lille 1 University of Science and Technology (USTL)
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Millithaler, Jean FrançoisLille I: Universite des Sciences et Technologies de Lille (USTL),Lille 1 University of Science and Technology (USTL)
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Gonzalez, T.Universidad de Salamanca,University of Salamanca
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Mateos, J.Universidad de Salamanca,University of Salamanca
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Grahn, Jan,1962Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)jagr
(author)
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Chalmers tekniska högskolaLille I: Universite des Sciences et Technologies de Lille (USTL)
(creator_code:org_t)
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In:Solid-State Electronics: Elsevier BV104:Feb, s. 79-850038-1101
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Westlund, Andrea ...
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Sangare, P.
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Ducournau, G.
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Iniguez-de-la-To ...
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Nilsson, Per-Åke ...
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Gaquiere, C.
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Desplanque, L.
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Wallart, X.
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Millithaler, Jea ...
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Gonzalez, T.
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Mateos, J.
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Grahn, Jan, 1962
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