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- Engström, Olof,1943Chalmers tekniska högskola,Chalmers University of Technology (author)
Internal photoemission technique for high-k oxide/semiconductor band offset determination: The influence of semiconductor bulk properties
- Article/chapterEnglish2014
Publisher, publication year, extent ...
- 2014
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- LIBRIS-ID:oai:research.chalmers.se:cc1552f2-0c0e-4a86-a15e-559b4b0d6edf
- ISBN:9781479943784
- https://research.chalmers.se/publication/208850URI
- https://doi.org/10.1109/ESSDERC.2014.6948837DOI
Supplementary language notes
- Language:English
- Summary in:English
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Notes
- A method for extracting energy band alignment of metal/high-k oxide/semiconductor structures from internal photoemission experiments is discussed by modeling the excitation and relaxation processes taking place in the semiconductor at photon irradiation. Classical literature data on photoemission of electrons from silicon and germanium surfaces into vacuum is compared with more recently published data on HfO2/Si and HfO2/Ge structures to identify characteristic features of photoelectric yield. We find that a dominating structure of such spectra, which often has been assumed to originate from the oxide barrier, derives from the energy dependence of absorption coefficient and mean free paths of excited electrons. Our results indicate that most IPE data on high-k oxide/silicon and germanium structures need re-interpretation.
Subject headings and genre
- TEKNIK OCH TEKNOLOGIER Elektroteknik och elektronik hsv//swe
- ENGINEERING AND TECHNOLOGY Electrical Engineering, Electronic Engineering, Information Engineering hsv//eng
- band offset
- MOS barrier
- IPE
- high-k
Added entries (persons, corporate bodies, meetings, titles ...)
- Przewlocki, H. M. (author)
- Mitrovic, I.Z.University of Liverpool (author)
- Chalker, P.R.University of Liverpool (author)
- Chalmers tekniska högskolaUniversity of Liverpool (creator_code:org_t)
Related titles
- In:44th European Solid-State Device Research Conference, ESSDERC 2014, Palazzo del CasinoVenezia Lido, Italy, 22-26 September 2014, s. 369-3721930-88769781479943784
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