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GaAs-Based Room-Temperature Continuous-Wave 1.59 µm GaInNAsSb Single-Quantum-Well Laser Diode Grown by Molecular-Beam Epitaxy
- Niu, Zhichuan (author)
- Zhang, Shiyong (author)
- Ni, Haiqiao (author)
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- Wu, Donghai (author)
- Peng, Hongling (author)
- Xu, Yingqiang (author)
- Li, Shuying (author)
- He, Zhenhong (author)
- Ren, Zhengwei (author)
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- (creator_code:org_t)
- 2005
- 2005
- English.
- In: Applied Physics Letters.
- Journal article (peer-reviewed)
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Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
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- Niu, Zhichuan
- Zhang, Shiyong
- Ni, Haiqiao
- Wu, Donghai
- Zhao Ternehäll, ...
- Peng, Hongling
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- Xu, Yingqiang
- Li, Shuying
- He, Zhenhong
- Ren, Zhengwei
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- ENGINEERING AND TECHNOLOGY
- ENGINEERING AND ...
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- Applied Physics ...
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- Chalmers University of Technology
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