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Thermal noise-limit...
Thermal noise-limited sensitivity of FET-based terahertz detectors
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- Cibiraite, D. (author)
- Johann Wolfgang Goethe Universität Frankfurt am Main,Goethe University Frankfurt
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- Bauer, M (author)
- Johann Wolfgang Goethe Universität Frankfurt am Main,Goethe University Frankfurt
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- Lisauskas, A. (author)
- Johann Wolfgang Goethe Universität Frankfurt am Main,Goethe University Frankfurt
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- Krozer, V. (author)
- Johann Wolfgang Goethe Universität Frankfurt am Main,Goethe University Frankfurt
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- Roskos, H. G. (author)
- Johann Wolfgang Goethe Universität Frankfurt am Main,Goethe University Frankfurt
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- Rämer, A. (author)
- Ferdinand-Braun-Institut fur Hochstfrequenztechnik
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- Heinrich, W. (author)
- Ferdinand-Braun-Institut fur Hochstfrequenztechnik
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- Pralgauskaite, S. (author)
- Vilniaus universitetas,Vilnius University
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- Zdanevicius, J. (author)
- Vilniaus universitetas,Vilnius University
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- Matukas, J. (author)
- Vilniaus universitetas,Vilnius University
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- ANDERSSON, MICHAEL, 1988 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Stake, Jan, 1971 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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(creator_code:org_t)
- 2017
- 2017
- English.
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In: 2017 International Conference on Noise and Fluctuations, ICNF 2017, Vilnius, Lithuania, 20-23 June 2017.
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Abstract
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- Here we present a detailed study on estimation of noise-dependent parameters, such as signal-to-noise ratio (SNR) or noise equivalent power (NEP), of field-effect-transistor based terahertz detectors (TeraFETs). Commonly, these parameters are estimated from a well-known assumption, that detector's performance is limited by the thermal noise of transistor's channel. However, practice shows that the influence of other noise sources or transient effects is considerable. We summarize TeraFET noise measurements performed on different material systems based transistors, such as AlGaN/GaN, AlGaAs/GaAs, silicon CMOS, and monolayer graphene. We have achieved a good agreement between thermal noise and measured data. However, attention has to be paid to gate leakage currents and slow defect charging and discharging effects, which can strongly influence TeraFET's performance estimation.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
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- ref (subject category)
To the university's database
- By the author/editor
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Cibiraite, D.
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Bauer, M
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Lisauskas, A.
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Krozer, V.
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Roskos, H. G.
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Rämer, A.
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show more...
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Heinrich, W.
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Pralgauskaite, S ...
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Zdanevicius, J.
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Matukas, J.
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ANDERSSON, MICHA ...
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Stake, Jan, 1971
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- About the subject
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- ENGINEERING AND TECHNOLOGY
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ENGINEERING AND ...
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and Electrical Engin ...
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and Other Electrical ...
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- 2017 Internation ...
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Chalmers University of Technology