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Atmospheric doping effects in epitaxial graphene: correlation of local and global electrical studies
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- Panchal, V. (author)
- National Physical Laboratory (NPL)
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- Giusca, C. E. (author)
- National Physical Laboratory (NPL)
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- Lartsev, Arseniy, 1987 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- (creator_code:org_t)
- 2016-02-01
- 2016
- English.
- In: 2D Materials. - : IOP Publishing. - 2053-1583. ; 3:1
- Journal article (peer-reviewed)
Abstract
Subject headings
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- We directly correlate the local (20 nm scale) and global electronic properties of a device containing mono-, bi- and tri-layer epitaxial graphene (EG) domains on 6H-SiC (0001) by simultaneously performing local surface potential measurements using Kelvin probe force microscopy and global transport measurements. Using well-controlled environmental conditions we investigate the doping effects of N-2, O-2, water vapour and NO2 at concentrations representative of the ambient air. We show that presence of O-2, water vapour and NO2 leads to p-doping of all EG domains. However, the thicker layers of EG are significantly less affected. Furthermore, we demonstrate that the general consensus of O-2 and water vapour present in ambient air providing majority of the p-doping to graphene is a common misconception. We experimentally show that even the combined effect of O-2, water vapour, and NO2 at concentrations higher than typically present in the atmosphere does not fully replicate p-doping from ambient air. Thus, for EG gas sensors it is essential to consider naturally occurring environmental effects and properly separate them from those coming from targeted species.
Subject headings
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Keyword
- Kelvin probe force microscopy
- epitaxial graphene
- gas sensor
- environmental doping
- Hall sensor
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- art (subject category)
- ref (subject category)
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- Gaskill, D. K.
- Kazakova, O.
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- 2D Materials
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- Chalmers University of Technology
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