A generalised methodology for oxide leakage current metric

Engström, Olof, 1943 (author): Chalmers tekniska högskola,Chalmers University of Technology

Piscator, Johan, 1977 (author): Chalmers tekniska högskola,Chalmers University of Technology

Raeissi, Bahman, 1979 (author): Chalmers tekniska högskola,Chalmers University of Technology

Hurley, P.K. (author)

Cherkaoui, K. (author)

Hall, S. (author)

Lemme, M.C. (author)

Gottlob, H.D.B. (author)

(creator_code:org_t)

ISBN 9781424417308
2008
2008
English.
In: Proceeding of 9th European Workshop on Ultimate Integration of Silicon (ULIS), Udine, Italy. - 9781424417308 ; , s. 167-

Abstract Subject headings

From calculations of semiconductor interfacecharge, oxide voltage and tunneling currents for MOSsystems with equivalent oxide thickness (EOT) in therange of 1 nm, rules are suggested for making itpossible to compare leakage quality of different oxideswith an accuracy of a factor 2 – 3 if the EOT is known.The standard procedure suggested gives considerablybetter accuracy than the commonly used method todetermine leakage at VFB+1V for n-type and VFB-1V forp-type substrates.

By the author/editor: Engström, Olof, ...; Piscator, Johan, ...; Raeissi, Bahman, ...; Hurley, P.K.; Cherkaoui, K.; Hall, S.; show more...; Lemme, M.C.; Gottlob, H.D.B.; show less...

About the subject

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