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A generalised metho...
A generalised methodology for oxide leakage current metric
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- Engström, Olof, 1943 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Piscator, Johan, 1977 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Raeissi, Bahman, 1979 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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Hurley, P.K. (author)
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Cherkaoui, K. (author)
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Hall, S. (author)
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Lemme, M.C. (author)
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Gottlob, H.D.B. (author)
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show less...
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(creator_code:org_t)
- ISBN 9781424417308
- 2008
- 2008
- English.
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In: Proceeding of 9th European Workshop on Ultimate Integration of Silicon (ULIS), Udine, Italy. - 9781424417308 ; , s. 167-
- Related links:
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https://research.cha...
Abstract
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- From calculations of semiconductor interfacecharge, oxide voltage and tunneling currents for MOSsystems with equivalent oxide thickness (EOT) in therange of 1 nm, rules are suggested for making itpossible to compare leakage quality of different oxideswith an accuracy of a factor 2 – 3 if the EOT is known.The standard procedure suggested gives considerablybetter accuracy than the commonly used method todetermine leakage at VFB+1V for n-type and VFB-1V forp-type substrates.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
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Engström, Olof, ...
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Piscator, Johan, ...
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Raeissi, Bahman, ...
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Hurley, P.K.
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Cherkaoui, K.
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Hall, S.
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show more...
-
Lemme, M.C.
-
Gottlob, H.D.B.
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show less...
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- ENGINEERING AND TECHNOLOGY
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ENGINEERING AND ...
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and Electrical Engin ...
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Proceeding of 9t ...
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Chalmers University of Technology