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Low temperature oxi...
Low temperature oxides deposited by remote plasma enhanced CVD
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- Ragnarsson, Lars-Åke, 1968 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Bengtsson, Stefan, 1961 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Andersson, Mats O., 1963 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Södervall, Ulf, 1954 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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(creator_code:org_t)
- 1994
- 1994
- English.
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In: Proceedings of the Second International Symposium on Ultra-Clean Processing of Silicon Surfaces (UCPSS '94). ; , s. 117-
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Abstract
Subject headings
Close
- A remote plasma enhanced chemical vapor deposition (RPECVD) process was used to prepare SiO2-Si structures at ~300°C. The best midgap interface trap densities, Ditm, as obtained by C-V techniques are 6-8×1010 cm-2eV-1 for SiO2-Si(100) and 2-3×1011 cm-2eV-1 for SiO2-Si(111)
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- integrated circuit technology
- silicon
- interface states
- plasma CVD
- capacitance
- dielectric thin films
- silicon compounds
- electron traps
- hole traps
- elemental semiconductors
Publication and Content Type
- art (subject category)
- ref (subject category)
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