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A W-band MMIC Resistive Mixer Based on Epitaxial Graphene FET
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- Habibpour, Omid, 1979 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- He, Zhongxia Simon, 1984 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Strupinski, W. (author)
- Instytutu Technologii Materialow Elektronicznych w Warszawie
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- Institute of Electrical and Electronics Engineers (IEEE), 2017
- 2017
- English.
- In: IEEE Microwave and Wireless Components Letters. - : Institute of Electrical and Electronics Engineers (IEEE). - 1558-1764 .- 1531-1309. ; 27:2, s. 168-170
- Journal article (peer-reviewed)
Abstract
Subject headings
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- This letter presents the design, fabrication and characterization of the first graphene based monolithic microwave integrated circuit (MMIC) in microstrip technology operating in W-band. The circuit is a resistive mixer in a 250 nm graphene field effect transistor (G-FET) technology on a SiC substrate. A conversion loss of 18 dB is achieved which is limited by the available local oscillator (LO) power. The mixer exhibits a flat response over radio frequency (RF) range of 90-100 GHz. The RF bandwidth is also limited by the measurement setup.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Nanoteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Nano-technology (hsv//eng)
Keyword
- W-band
- resistive mixer
- Engineering
- Epitaxial graphene
- graphene FET
- MMIC
Publication and Content Type
- art (subject category)
- ref (subject category)
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