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Addressing the electrical degradation of 845 nm micro-transfer printed VCSILs through TCAD simulations
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- Zenari, M. (author)
- Università Degli Studi di Padova,University of Padua
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- Buffolo, M. (author)
- Università Degli Studi di Padova,University of Padua
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- De Santi, C. (author)
- Università Degli Studi di Padova,University of Padua
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- Goyvaerts, J. (author)
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- (creator_code:org_t)
- 2023
- 2023
- English.
- In: Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD. - 2158-3234. ; 2023-September, s. 91-92
- Conference paper (peer-reviewed)
Abstract
Subject headings
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- In this work we present the electrical modeling of novel 845 nm vertical-cavity silicon-integrated lasers (VCSILs) for silicon photonics (SiPh). We tested the reliability of the devices by submitting them to high current stress, corresponding to ≈ 20xIth, to observe the degradation as a function of time. During the stress experiment, we monitored the electrical characteristics at regular intervals and we observed two separate degradation phenomena: the series resistance increment and the lowering of the turn-on voltage. Thanks to a Poisson-drift diffusion simulator we simulated the I-V characteristics and the band diagrams to interpret the degradation phenomena. The results of the simulations confirmed that the electrical degradation can be caused by the diffusion of compensation impurities originating from the p-contact layers. The same mechanism was also responsible of the optical degradation of the devices.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- VCSIL
- Degradation
- Silicon photonics
- Diffusion
- Impurities
Publication and Content Type
- kon (subject category)
- ref (subject category)
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- Meneghesso, G.
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- Meneghini, M.
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- Chalmers University of Technology
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