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Good selectivity between a NiCr mask and GaAs and AlGaAs by chemically assisted ion beam etching with Cl2 gas
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- Xiao, Zhaohua, 1962 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Nilsson, Bengt, 1954 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
- (creator_code:org_t)
- 2010-08-22
- 1991
- English.
- In: Journal of the Electrochemical Society. - : Wiley. - 1945-7111 .- 0013-4651. ; 138, s. 3086-9
- Journal article (peer-reviewed)
Abstract
Subject headings
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- The authors report highly selective etching rates between a Ni-Cr mask and GaAs and AlGaAs layers as well as highly anisotropic profiles in these materials at a nanometer scale using the Ni-Cr mask and chemical assisted ion beam etching. The etching rates of Ni-Cr, GaAs, and AlGaAs depend on Cl2 gas flux. ion beam energy, and ion beam current density. Selectivities of the order of 40:1 and 8:1 between GaAs, respectively. Al0.29Ga0.71As and Ni0.7Cr0.3, were obtained at an ion beam energy of 500 eV, beam current density of 0.2 mA/cm2, and a Cl2 flow of 4.2 ml/min
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- chromium alloys
- chlorine
- nickel alloys
- gallium arsenide
- integrated circuit technology
- aluminium compounds
- III-V semiconductors
- masks
- sputter etching
- VLSI
Publication and Content Type
- art (subject category)
- ref (subject category)
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