Fabrication and characterization of field-plated buried-gate SiC MESFETs

Andersson, Kristoffer, 1976 (author): Chalmers tekniska högskola,Chalmers University of Technology

Sudow, Mattias, 1980 (author): Chalmers tekniska högskola,Chalmers University of Technology

Nilsson, Per-Åke, 1964 (author): Chalmers tekniska högskola,Chalmers University of Technology

Sveinbjörnsson, Einar, 1964 (author): Chalmers tekniska högskola,Chalmers University of Technology

Hjelmgren, Hans, 1960 (author): Chalmers tekniska högskola,Chalmers University of Technology

Zirath, Herbert, 1955 (author): Chalmers tekniska högskola,Chalmers University of Technology

Rorsman, Niklas, 1964 (author): Chalmers tekniska högskola,Chalmers University of Technology

(creator_code:org_t)

2006
2006
English.
In: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 27:7, s. 573-575

Related links:: https://research.cha...; show more...; https://doi.org/10.1...; show less...

Abstract Subject headings

Silicon carbide (SiC) MESFETs were fabricated using a standard SiC MESFET structure with the application of the "buried-channel" and field-plate (FP) techniques in the process. FPs combined with a buried-gate are shown to be favorable concerning output power density and power-added efficiency (PAE), due to higher breakdown voltage and decreased output conductance. A very high power density of 7.8 W/mm was measured on-wafer at 3 GHz for a two-finger 400-/spl mu/m gate periphery SiC MESFET. The PAE for this device was 70% at class AB bias. Two-tone measurements at 3 GHz /spl plusmn/ 100 kHz indicate an optimum FP length for high linearity operation.

By the author/editor: Andersson, Krist ...; Sudow, Mattias, ...; Nilsson, Per-Åke ...; Sveinbjörnsson, ...; Hjelmgren, Hans, ...; Nilsson, Joakim; show more...; Ståhl, Johan; Zirath, Herbert, ...; Rorsman, Niklas, ...; show less...

About the subject

ENGINEERING AND TECHNOLOGY: ENGINEERING AND ...; and Electrical Engin ...; and Other Electrical ...

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