Search: onr:"swepub:oai:research.chalmers.se:dffdd8f3-70ee-468c-8f85-fe47ec035e5c" >
Fabrication and cha...
Fabrication and characterization of field-plated buried-gate SiC MESFETs
-
- Andersson, Kristoffer, 1976 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
-
- Sudow, Mattias, 1980 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
-
- Nilsson, Per-Åke, 1964 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
-
show more...
-
- Sveinbjörnsson, Einar, 1964 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
-
- Hjelmgren, Hans, 1960 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
-
- Nilsson, Joakim (author)
- Telefonaktiebolaget L M Ericsson,Ericsson
-
- Ståhl, Johan (author)
- Telefonaktiebolaget L M Ericsson,Ericsson
-
- Zirath, Herbert, 1955 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
-
- Rorsman, Niklas, 1964 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
-
show less...
-
(creator_code:org_t)
- 2006
- 2006
- English.
-
In: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 27:7, s. 573-575
- Related links:
-
https://research.cha...
-
show more...
-
https://doi.org/10.1...
-
show less...
Abstract
Subject headings
Close
- Silicon carbide (SiC) MESFETs were fabricated using a standard SiC MESFET structure with the application of the "buried-channel" and field-plate (FP) techniques in the process. FPs combined with a buried-gate are shown to be favorable concerning output power density and power-added efficiency (PAE), due to higher breakdown voltage and decreased output conductance. A very high power density of 7.8 W/mm was measured on-wafer at 3 GHz for a two-finger 400-/spl mu/m gate periphery SiC MESFET. The PAE for this device was 70% at class AB bias. Two-tone measurements at 3 GHz /spl plusmn/ 100 kHz indicate an optimum FP length for high linearity operation.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- wide band gap semiconductors
- silicon compounds
- microwave field effect transistors
- Schottky gate field effect transistors
Publication and Content Type
- art (subject category)
- ref (subject category)
Find in a library
To the university's database
- By the author/editor
-
Andersson, Krist ...
-
Sudow, Mattias, ...
-
Nilsson, Per-Åke ...
-
Sveinbjörnsson, ...
-
Hjelmgren, Hans, ...
-
Nilsson, Joakim
-
show more...
-
Ståhl, Johan
-
Zirath, Herbert, ...
-
Rorsman, Niklas, ...
-
show less...
- About the subject
-
- ENGINEERING AND TECHNOLOGY
-
ENGINEERING AND ...
-
and Electrical Engin ...
-
and Other Electrical ...
- Articles in the publication
-
IEEE Electron De ...
- By the university
-
Chalmers University of Technology