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Enhanced Cold Wall ...
Enhanced Cold Wall CVD Reactor Growth of Horizontally Aligned Single-walled Carbon Nanotubes
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- Mu, Wei, 1985 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Kwak, Eun-Hye (författare)
- Kangwon National University
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- Chen, Bingan (författare)
- Aixtron Limited
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- Huang, Shirong (författare)
- Shanghai University
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- Edwards, Michael, 1986 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Fu, Yifeng, 1984 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Jeppson, Kjell, 1947 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Teo, Kenneth (författare)
- Aixtron Limited
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- Jeong, Goo-Hwan (författare)
- Kangwon National University
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- Liu, Johan, 1960 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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(creator_code:org_t)
- 2016-05-10
- 2016
- Engelska.
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Ingår i: Electronic Materials Letters. - : Springer Science and Business Media LLC. - 1738-8090 .- 2093-6788. ; 12:3, s. 329-337
- Relaterad länk:
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http://dx.doi.org/10...
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https://doi.org/10.1...
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https://research.cha...
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Abstract
Ämnesord
Stäng
- Synthesis of horizontally-aligned single-walled carbon nanotubes (HA-SWCNTs) by chemical vapor deposition (CVD) directly on quartz seems very promising for the fabrication of future nanoelectronic devices. In comparison to hot-wall CVD, synthesis of HA-SWCNTs in a cold-wall CVD chamber not only means shorter heating, cooling and growth periods, but also prevents contamination of the chamber. However, since most synthesis of HA-SWCNTs is performed in hot-wall reactors, adapting this well-established process to a cold-wall chamber becomes extremely crucial. Here, in order to transfer the CVD growth technology from a hot-wall to a cold-wall chamber, a systematic investigation has been conducted to determine the influence of process parameters on the HA-SWCNT’s growth. For two reasons, the cold-wall CVD chamber was upgraded with a top heater to complement the bottom substrate heater; the first reason to maintain a more uniform temperature profile during HA-SWCNTs growth, and the second reason to preheat the precursor gas flow before projecting it onto the catalyst. Our results show that the addition of a top heater had a significant effect on the synthesis. Characterization of the CNTs shows that the average density of HA-SWCNTs is around 1-2 tubes/μm with high growth quality as shown by Raman analysis.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Nanoteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Nano-technology (hsv//eng)
Nyckelord
- CVD
- cold-wall
- SWCNTs
- synthesis
- horizontally aligned
- hot-wall
Publikations- och innehållstyp
- art (ämneskategori)
- ref (ämneskategori)
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Till lärosätets databas
- Av författaren/redakt...
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Mu, Wei, 1985
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Kwak, Eun-Hye
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Chen, Bingan
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Huang, Shirong
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Edwards, Michael ...
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Fu, Yifeng, 1984
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visa fler...
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Jeppson, Kjell, ...
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Teo, Kenneth
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Jeong, Goo-Hwan
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Liu, Johan, 1960
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visa färre...
- Om ämnet
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- TEKNIK OCH TEKNOLOGIER
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TEKNIK OCH TEKNO ...
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och Nanoteknik
- Artiklar i publikationen
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Electronic Mater ...
- Av lärosätet
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Chalmers tekniska högskola