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1.58 µm InGaAs quan...
1.58 µm InGaAs quantum well laser on GaAs
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- Tångring, Ivar, 1978 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Wang, Shu Min, 1963 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Larsson, Anders, 1957 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Lai, Zonghe, 1948 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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Ni, H. Q. (author)
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Wu, B.P. (author)
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Wu, D.H. (author)
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Xiong, Y.H. (author)
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Huang, S.S. (author)
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Niu, Z.C. (author)
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(creator_code:org_t)
- 2007
- 2007
- English.
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In: Applied Physics Letters. ; 91, s. 221101-
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Abstract
Subject headings
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- We demonstrate the 1.58 µm emission at room temperature from a metamorphic In0.6Ga0.4As quantum well laser grown on GaAs by molecular beam epitaxy. The large lattice mismatch was accommodated through growth of a linearly graded buffer layer to create a high quality virtual In0.32Ga0.68As substrate. Careful growth optimization ensured good optical and structural qualities. For a 1250×50 µm2 broad area laser, a minimum threshold current density of 490 A/cm2 was achieved under pulsed operation. This result indicates that metamorphic InGaAs quantum wells can be an alternative approach for 1.55 µm GaAs-based lasers.
Subject headings
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Publication and Content Type
- art (subject category)
- ref (subject category)
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- By the author/editor
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Tångring, Ivar, ...
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Wang, Shu Min, 1 ...
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Larsson, Anders, ...
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Lai, Zonghe, 194 ...
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Ni, H. Q.
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Wu, B.P.
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show more...
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Wu, D.H.
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Xiong, Y.H.
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Huang, S.S.
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Niu, Z.C.
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show less...
- About the subject
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- NATURAL SCIENCES
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NATURAL SCIENCES
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and Physical Science ...
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and Condensed Matter ...
- Articles in the publication
- Applied Physics ...
- By the university
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Chalmers University of Technology