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Effects of Surface Passivation and Deposition Methods on the 1/f Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors

Thanh, Thi Ngoc Do, 1984 (author)
Chalmers tekniska högskola,Chalmers University of Technology
Malmros, Anna, 1977 (author)
Chalmers tekniska högskola,Chalmers University of Technology
Gamarra, P. (author)
Thales Group
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Lacam, C. (author)
Thales Group
di Forte-Poisson, M. A. (author)
Thales Group
Tordjman, M. (author)
Thales Group
Hörberg, Mikael, 1972 (author)
Chalmers tekniska högskola,Chalmers University of Technology
Aubry, R. (author)
Thales Group
Rorsman, Niklas, 1964 (author)
Chalmers tekniska högskola,Chalmers University of Technology
Kuylenstierna, Dan, 1976 (author)
Chalmers tekniska högskola,Chalmers University of Technology
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 (creator_code:org_t)
Institute of Electrical and Electronics Engineers (IEEE), 2015
2015
English.
In: IEEE Electron Device Letters. - : Institute of Electrical and Electronics Engineers (IEEE). - 0741-3106 .- 1558-0563. ; 36:4, s. 315-317
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • This letter reports on effects of Si3N4 and Al2O3 surface passivation as well as different deposition methods on the low-frequency noise (LFN) characteristics for AlInN/AlN/GaN high electron mobility transistors (HEMTs). Two samples are passivated with Al2O3, deposited by two different methods: 1) thermal atomic layer deposition (ALD) and 2) plasma-assisted ALD. The third sample is passivated with Si3N4 using plasma-enhanced chemical vapor deposition. The LFN of the three samples is measured under a bias condition relevant for amplifier and oscillator applications. It is found that the surface passivation has a major impact on the noise level. The best surface passivation, with respect to LFN, is the thermal ALD Al2O3 for which the noise current spectral density measured at 10 kHz is 1 x 10(-14) Hz(-1) for a bias of V-dd/I-dd = 10 V/80 mA. To the best of our knowledge, this result sets a standard as the best reported LFN of AlInN/GaN HEMTs. It is also in the same order as good commercial AlGaN/GaN HEMTs reported in literature and thus demonstrates that AlInN/GaN HEMTs, passivated with thermal ALD Al2O3, is a good candidate for millimeter-wave power generation.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Nanoteknik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Nano-technology (hsv//eng)

Keyword

Engineering
Electrical & Electronic
AlInN/AlN/GaN
low frequency noise (LFN) measurement
high electron mobility transistor (HEMT)
HEMT

Publication and Content Type

art (subject category)
ref (subject category)

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