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Bismuth Effects on Electronic Levels in GaSb(Bi)/AlGaSb Quantum Wells Probed by Infrared Photoreflectance
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- Chen, X (author)
- Chinese Academy of Sciences
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- Song, Y. X. (author)
- Chinese Academy of Sciences
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- Zhu, L. Q. (author)
- Chinese Academy of Sciences
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- 2015
- 2015
- English.
- In: Chinese Physics Letters. - 0256-307X .- 1741-3540. ; 32:6
- Journal article (peer-reviewed)
Abstract
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- GaSb(Bi)/Al0.2Ga0.8Sb single quantum wells are characterized by a Fourier transform infrared spectrometerbased photoreflectance method at 77 K. Spatially direct and indirect transitions between the electronic levels at and above the effective band gap are well resolved. The shifts of the electronic levels with Bi incorporation are identified quantitatively. The results show that the upshift of the valence band edge is clarified to be dominant, while the Bi-induced downshift of the conduction band edge does exist and contributes to the band gap reduction in the GaSbBi quantum-well layer by (29±6)%.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Nanoteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Nano-technology (hsv//eng)
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- art (subject category)
- ref (subject category)
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- By the author/editor
- Chen, X
- Song, Y. X.
- Zhu, L. Q.
- Qi, Zhen
- Zhu, L.
- F.X.Zha,
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- Guo, Shaoling
- Wang, Shu Min, 1 ...
- Shao, J.
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- About the subject
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- ENGINEERING AND TECHNOLOGY
- ENGINEERING AND ...
- and Nano technology
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- Chinese Physics ...
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- Chalmers University of Technology
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