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A versatile low-res...
A versatile low-resistance ohmic contact process with ohmic recess and low-temperature annealing for GaN HEMTs
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- Lin, Yen-Ku (author)
- National Chiao Tung University,Natl Chiao Tung Univ, Taiwan
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- Bergsten, Johan, 1988 (author)
- Chalmers tekniska högskola,Chalmers University of Technology,Chalmers Univ Technol, Sweden
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- Leong, Hector (author)
- Linköpings universitet,Institutionen för fysik, kemi och biologi,Tekniska fakulteten
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- Malmros, Anna, 1977 (author)
- Chalmers tekniska högskola,Chalmers University of Technology,Chalmers Univ Technol, Sweden
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- Chen, Jr-Tai (author)
- SweGaN AB, Tekn Ringen 8D, SE-58330 Linkoping, Sweden
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- Ding Yuan, Chen, 1991 (author)
- Chalmers tekniska högskola,Chalmers University of Technology,Chalmers Univ Technol, Sweden; SweGaN AB, Tekn Ringen 8D, SE-58330 Linkoping, Sweden
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- Kordina, Olof (author)
- SweGaN AB, Tekn Ringen 8D, SE-58330 Linkoping, Sweden
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- Zirath, Herbert, 1955 (author)
- Chalmers tekniska högskola,Chalmers University of Technology,Chalmers Univ Technol, Sweden
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- Chang, Edward Yi (author)
- National Chiao Tung University,Natl Chiao Tung Univ, Taiwan; Natl Chiao Tung Univ, Taiwan; Natl Chiao Tung Univ, Taiwan
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- Rorsman, Niklas, 1964 (author)
- Chalmers tekniska högskola,Chalmers University of Technology,Chalmers Univ Technol, Sweden
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(creator_code:org_t)
- 2018-08-21
- 2018
- English.
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In: Semiconductor Science and Technology. - : IOP Publishing. - 1361-6641 .- 0268-1242. ; 33:9
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Abstract
Subject headings
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- Deeply recessed ohmic contacts for GaN-based high electron mobility transistors (HEMTs) are demonstrated. It is shown that low-resistance ohmic contacts can be achieved with recessing beyond the AlGaN Schottky barrier where the ohmic contacts are formed on the sidewall of the recess. This makes the process versatile and relatively insensitive to the exact recess depth. The ohmic contact is based on a gold-free metallization scheme consisting of a Ta/Al/Ta metal stack requiring a low-temperature annealing. Important parameters for this type of ohmic contact process include the metal coverage, slope of the etched sidewall, bottom Ta-layer thickness, as well as annealing temperature and duration. The optimized contact resistance is as low as 0.24 Omega mm after annealing at 575 degrees C. Moreover, this sidewall contact approach was successfully implemented on different epitaxial heterostructures with different AlGaN barrier thickness as well as with and without AlN exclusion layer. All the samples exhibited excellent contact resistances in a wide range of recess depths. The Ta-based, sidewall ohmic contact process is a promising method for forming an ohmic contact on a wide range of GaN HEMT epitaxial designs.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Maskinteknik -- Tribologi (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Mechanical Engineering -- Tribology (hsv//eng)
- TEKNIK OCH TEKNOLOGIER -- Materialteknik -- Bearbetnings-, yt- och fogningsteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Materials Engineering -- Manufacturing, Surface and Joining Technology (hsv//eng)
- TEKNIK OCH TEKNOLOGIER -- Materialteknik -- Annan materialteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Materials Engineering -- Other Materials Engineering (hsv//eng)
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Telekommunikation (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Telecommunications (hsv//eng)
- TEKNIK OCH TEKNOLOGIER -- Nanoteknik -- Nanoteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Nano-technology -- Nano-technology (hsv//eng)
Keyword
- sidewall contact
- HEMT
- ohmic recess
- contact resistance
- gold-free
- GaN
Publication and Content Type
- art (subject category)
- ref (subject category)
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- By the author/editor
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Lin, Yen-Ku
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Bergsten, Johan, ...
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Leong, Hector
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Malmros, Anna, 1 ...
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Chen, Jr-Tai
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Ding Yuan, Chen, ...
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show more...
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Kordina, Olof
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Zirath, Herbert, ...
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Chang, Edward Yi
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Rorsman, Niklas, ...
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show less...
- About the subject
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- ENGINEERING AND TECHNOLOGY
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ENGINEERING AND ...
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and Mechanical Engin ...
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and Tribology
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- ENGINEERING AND TECHNOLOGY
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ENGINEERING AND ...
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and Materials Engine ...
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and Manufacturing Su ...
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- ENGINEERING AND TECHNOLOGY
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ENGINEERING AND ...
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and Materials Engine ...
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and Other Materials ...
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- ENGINEERING AND TECHNOLOGY
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ENGINEERING AND ...
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and Electrical Engin ...
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and Telecommunicatio ...
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- ENGINEERING AND TECHNOLOGY
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ENGINEERING AND ...
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and Nano technology
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and Nano technology
- Articles in the publication
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Semiconductor Sc ...
- By the university
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Chalmers University of Technology
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Linköping University