Search: onr:"swepub:oai:research.chalmers.se:f47566d1-d99f-46d0-8e7d-6e49db93fad2" >
Microwave Performan...
Microwave Performance of 'Buffer-Free' GaN-on-SiC High Electron Mobility Transistors
-
- Chen, Ding Yuan (author)
- Chalmers tekniska högskola,Chalmers University of Technology
-
- Malmros, Anna, 1977 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
-
Thorsell, Mattias, 1982 (author)
-
show more...
-
Hjelmgren, Hans, 1960 (author)
-
Kordina, O. (author)
-
Chen, J. T. (author)
-
- Rorsman, Niklas, 1964 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
-
show less...
-
(creator_code:org_t)
- 2020
- 2020
- English.
-
In: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 41:6, s. 828-831
- Related links:
-
https://research.cha...
-
show more...
-
https://doi.org/10.1...
-
https://research.cha...
-
show less...
Abstract
Subject headings
Close
- High performance microwave GaN-on-SiC HEMTs are demonstrated on a heterostructure without a conventional thick doped buffer. The HEMT is fabricated on a high-quality 0.25~\boldsymbol {\mu }\text{m} unintentional doped GaN layer grown directly on a transmorphic epitaxially grown AlN nucleation layer. This approach allows the AlN-nucleation layer to act as a back-barrier, limiting short channel effects and removing buffer leakage. The devices with the 'buffer-free' heterostructure show competitive DC and RF characteristics, as benchmarked against the devices made on a commercial Fe-doped epi-wafer. Peak transconductances of 500 mS/mm and a maximum saturated drain current of 1 A/mm are obtained. An extrinsic \text{f}-{\sf T} of 70 GHz and \text{f}-{\sf max} of 130 GHz are achieved for transistors with a gate length of 100 nm. Pulsed-IV measurements reveal a lower current slump and a smaller knee walkout. The dynamic IV performance translates to an output power of 4.1 W/mm, as measured with active load-pull at 3 GHz. These devices suggest that the 'buffer-free' concept may offer an alternative route for high frequency GaN HEMTs with less electron trapping effects.
Subject headings
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Keyword
- GaN
- HEMTs
- microwave
- buffer-free 23 heterostructure
Publication and Content Type
- art (subject category)
- ref (subject category)
Find in a library
To the university's database
- By the author/editor
-
Chen, Ding Yuan
-
Malmros, Anna, 1 ...
-
Thorsell, Mattia ...
-
Hjelmgren, Hans, ...
-
Kordina, O.
-
Chen, J. T.
-
show more...
-
Rorsman, Niklas, ...
-
show less...
- About the subject
-
- NATURAL SCIENCES
-
NATURAL SCIENCES
-
and Physical Science ...
-
and Condensed Matter ...
- Articles in the publication
-
IEEE Electron De ...
- By the university
-
Chalmers University of Technology