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Graphene field-effe...
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Bonmann, Marlene,1988Chalmers tekniska högskola,Chalmers University of Technology
(author)
Graphene field-effect transistors with high extrinsic fT and fmax
- Article/chapterEnglish2019
Publisher, publication year, extent ...
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2019
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electronicrdacarrier
Numbers
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LIBRIS-ID:oai:research.chalmers.se:f493dec3-7e87-4019-8945-eed47120dad6
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https://research.chalmers.se/publication/508311URI
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https://doi.org/10.1109/LED.2018.2884054DOI
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https://research.chalmers.se/publication/506728URI
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Language:English
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Summary in:English
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Subject category:art swepub-publicationtype
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Subject category:ref swepub-contenttype
Notes
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In this work, we report on the performance of graphene field-effect transistors (GFETs) in which the extrinsic transit frequency (fT) and maximum frequency of oscillation (fmax) showed improved scaling behavior with respect to the gate length (Lg). This improvement was achieved by the use of high-quality graphene in combination with successful optimization of the GFET technology, where extreme low source/drain contact resistances were obtained together with reduced parasitic pad capacitances. GFETs with gate lengths ranging from 0.5 μm to 2 μm have been characterized, and extrinsic fT and fmax frequencies of up to 34 GHz and 37 GHz, respectively, were obtained for GFETs with the shortest gate lengths. Simulations based on a small-signal equivalent circuit model are in good agreement with the measured data. Extrapolation predicts extrinsic fT and fmax values of approximately 100 GHz at Lg=50 nm. Further optimization of the GFET technology enables fmax values above 100 GHz, which is suitable for many millimeter wave applications.
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Asad, Muhammad,1986Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)asadmu
(author)
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Yang, Xinxin,1988Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)xinxiny
(author)
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Generalov, Andrey,1987Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)gandrey
(author)
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Vorobiev, Andrei,1963Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)vorobiev
(author)
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Banszerus, LucaRheinisch-Westfaelische Technische Hochschule Aachen,RWTH Aachen University
(author)
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Stampfer, ChristophRheinisch-Westfaelische Technische Hochschule Aachen,RWTH Aachen University
(author)
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Otto, Martin
(author)
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Neumaier, Daniel
(author)
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Stake, Jan,1971Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)stake
(author)
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Chalmers tekniska högskolaRheinisch-Westfaelische Technische Hochschule Aachen
(creator_code:org_t)
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In:IEEE Electron Device Letters40:1, s. 131-1340741-31061558-0563
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