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  • Fu, Ying,1964Chalmers tekniska högskola,Chalmers University of Technology (author)

AlGaAs/GaAs and InAlAs/InGaAs Heterostructure Barrier Varactors

  • Article/chapterEnglish1997

Publisher, publication year, extent ...

  • AIP Publishing,1997

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  • LIBRIS-ID:oai:research.chalmers.se:f52cc272-25b9-4023-a48a-96553dbee207
  • https://doi.org/10.1063/1.366461DOI
  • https://research.chalmers.se/publication/10981URI

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  • Language:English
  • Summary in:English

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  • Subject category:art swepub-publicationtype
  • Subject category:ref swepub-contenttype

Notes

  • By the Schrödinger and Poisson equations, we have theoretically investigated AlGaAs/GaAs and InAlAs/InGaAs single barrier varactors. The energy band structure, carrier distribution, and conduction current are fully exploited for varactor design. We have explained the experimental current-voltage and capacitance-voltage measurements very well. A simple analytical model for energy band structure is derived based on the Schrödinger and Poisson equation calculation. It is found that a barrier structure of 3 nm Al0.3Ga0.7As/3 nm AlAs/3nm Al0.3Ga0.7As for an Al0.3Ga0.7As/GaAs varactor and a barrier structure of 8 nm In0.52Al0.48As/3 nm AlAs/8 nm In0.52Al0.48As for In0.52Al0.48As/In0.47GaAs are optimal for minimal conduction currents.

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Added entries (persons, corporate bodies, meetings, titles ...)

  • Stake, Jan,1971Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)stake (author)
  • Dillner, Lars,1968Chalmers tekniska högskola,Chalmers University of Technology (author)
  • Willander, Magnus,1948Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)xwilma (author)
  • Kollberg, Erik,1937Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)erikkoll (author)
  • Chalmers tekniska högskola (creator_code:org_t)

Related titles

  • In:Journal of Applied Physics: AIP Publishing82:11, s. 5568-55720021-89791089-7550

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