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AlGaAs/GaAs and InA...
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Fu, Ying,1964Chalmers tekniska högskola,Chalmers University of Technology
(author)
AlGaAs/GaAs and InAlAs/InGaAs Heterostructure Barrier Varactors
- Article/chapterEnglish1997
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LIBRIS-ID:oai:research.chalmers.se:f52cc272-25b9-4023-a48a-96553dbee207
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https://doi.org/10.1063/1.366461DOI
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https://research.chalmers.se/publication/10981URI
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Language:English
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Summary in:English
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Notes
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By the Schrödinger and Poisson equations, we have theoretically investigated AlGaAs/GaAs and InAlAs/InGaAs single barrier varactors. The energy band structure, carrier distribution, and conduction current are fully exploited for varactor design. We have explained the experimental current-voltage and capacitance-voltage measurements very well. A simple analytical model for energy band structure is derived based on the Schrödinger and Poisson equation calculation. It is found that a barrier structure of 3 nm Al0.3Ga0.7As/3 nm AlAs/3nm Al0.3Ga0.7As for an Al0.3Ga0.7As/GaAs varactor and a barrier structure of 8 nm In0.52Al0.48As/3 nm AlAs/8 nm In0.52Al0.48As for In0.52Al0.48As/In0.47GaAs are optimal for minimal conduction currents.
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Stake, Jan,1971Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)stake
(author)
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Dillner, Lars,1968Chalmers tekniska högskola,Chalmers University of Technology
(author)
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Willander, Magnus,1948Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)xwilma
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Kollberg, Erik,1937Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)erikkoll
(author)
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Chalmers tekniska högskola
(creator_code:org_t)
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In:Journal of Applied Physics: AIP Publishing82:11, s. 5568-55720021-89791089-7550
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