A fast method of parameter extraction for MOS transistors

• A fast method of parameter extraction using a limited number of data points is developed for the SPICE level 3 MOS transistor model. Analytical expressions or numerical equations that converge fast are used to calculate the parameters and all interactions between parameters are taken into account. Proper selection of data points ensures physically reasonable values for most extracted parameters.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Keyword

Parameter extraction

SPICE

Threshold voltage

Solid modeling

Differential equations

Data mining

Algorithm design and analysis

Intrusion detection

MOSFETs

Transistors

Publication and Content Type

kon (subject category)

ref (subject category)