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Small-Versus Large-Signal Extraction of Charge Models of Microwave FETs

Avolio, G. (author)
Katholieke Universiteit Leuven
Raffo, A. (author)
University of Ferrara
Angelov, Iltcho, 1943 (author)
Chalmers tekniska högskola,Chalmers University of Technology
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Crupi, G. (author)
Universita degli Studi di Messina,University of Messina
Caddemi, A. (author)
Universita degli Studi di Messina,University of Messina
Vannini, G. (author)
Universita degli Studi di Messina,University of Messina
Schreurs, Dmmp (author)
Katholieke Universiteit Leuven
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 (creator_code:org_t)
Institute of Electrical and Electronics Engineers (IEEE), 2014
2014
English.
In: IEEE Microwave and Wireless Components Letters. - : Institute of Electrical and Electronics Engineers (IEEE). - 1558-1764 .- 1531-1309. ; 24:6, s. 394-396
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • In this letter we extract the parameters of the charge equations of a microwave transistor nonlinear model which is available in commercial CAD tools. In particular, the charge model parameters are extracted starting from small- and large-signal measurements. A better accuracy can be achieved when using large-signal measurements since the model parameters are obtained from experimental data which better reproduce the actual operating condition of the device under test. An advanced 0.15 x 300 mu m(2) pHEMT in GaAs technology, aimed at cold-FET mixer design, is considered as case study.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Keyword

nonlinear measurements
Engineering
Microwave device modeling
Electrical & Electronic
nonlinear device modeling

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