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Semi-physical nonlinear circuit model with device/physical parameters for HEMTs

Otsuka, Hiroshi (author)
Mitsubishi Electric Corporation
Oishi, Toshiyuki (author)
Mitsubishi Electric Corporation
Yamanaka, Koji (author)
Mitsubishi Electric Corporation
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Thorsell, Mattias, 1982 (author)
Chalmers tekniska högskola,Chalmers University of Technology
Andersson, Kristoffer, 1976 (author)
Chalmers tekniska högskola,Chalmers University of Technology
Inoue, A. (author)
Mitsubishi Electric Corporation
Hirano, Yoshihito (author)
Mitsubishi Electric Corporation
Angelov, Iltcho, 1943 (author)
Chalmers tekniska högskola,Chalmers University of Technology
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 (creator_code:org_t)
2011
2011
English.
In: International Journal of Microwave and Wireless Technologies. - 1759-0787 .- 1759-0795. ; 3:1, s. 25-33
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  • Journal article (peer-reviewed)
Abstract Subject headings
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  • A nonlinear circuit model (NCM) with physical parameters is proposed for direct simulation of the RF characteristics of GaN high-electron-mobility transistors (GaN HEMTs) on the basis of device structure. The physical equations are used for the construction of the model in order to connect strongly the model parameters with the device/physical parameters. Hyperbolic tangent functions are used as the model equations to ensure good model convergence and rapid simulation (short simulation time). The usefulness of these equations is confirmed by technology computer aided design (TCAD) simulation. The number of model parameters for the nonlinear components (Ids, Cgs, Cgd) is reduced to 17 by using common physical parameters for modeling the drain current and capacitance. The accuracy of this model is verified by applying to GaN HEMTs. The modeled I–V and capacitance characteristics agree well with the measurement data over a wide voltage range. Furthermore, this model can be used for the accurate evaluation of S-parameters and large-signal RF characteristics.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Keyword

Simulation
Transistor models
Power amplifiers
Physical modeling
GaN HEMT
Microwave

Publication and Content Type

art (subject category)
ref (subject category)

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