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Silicon-integrated ...
Silicon-integrated short-wavelength VCSELs
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- Haglund, Emanuel, 1988 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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Kumari, Sulakshna (author)
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- Haglund, Erik, 1985 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Gustavsson, Johan, 1974 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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Baets, Roel G. (author)
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Roelkens, Gunther (author)
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- Larsson, Anders, 1957 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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(creator_code:org_t)
- 2017
- 2017
- English.
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In: Proc. European Semiconductor Laser Workshop. ; , s. C21-
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Abstract
Subject headings
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- GaAs-based hybrid-cavity VCSELs integrated onto silicon by ultra-thin DVS-BCB adhesive bonding are presented. The hybrid-cavity implies that the optical field extends over both the GaAs- and the Si-based parts, which could allow a fraction of the light in the vertical-cavity to be coupled into an in-plane waveguide. Surface-emitting devices are demonstrated at ~860 nm with up to 2.3 mW optical output power and 12 GHz modulation bandwidth, providing error-free large signal data transmission up to 25 Gb/s.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Telekommunikation (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Telecommunications (hsv//eng)
Publication and Content Type
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- ref (subject category)
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